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3Novices:Nonvolatile memory as fast as RAM with the capacity of flash

Researchers from MIPT’s Center of Shared Research Facilities have found a way to control oxygen concentration in tantalum oxide films produced by atomic layer deposition. These thin films could be the basis for creating new forms of nonvolatile memory. The paper was published in the journal ACS Applied Materials & Interfaces.http://ift.tt/2rMTpuM
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